BSS670S2L - Infineon Technologies

Manufacturer Part Number

BSS670S2L

Manufacturer

Infineon Technologies

Introduction

Discrete Semiconductor Product

Single Transistor FET, MOSFET

Product Features and Performance

N-Channel MOSFET

55V Drain-to-Source Voltage

±20V Gate-to-Source Voltage Range

650mΩ On-Resistance

540mA Continuous Drain Current

75pF Input Capacitance

360mW Power Dissipation

Operating Temperature Range: -55°C to 150°C

Product Advantages

Optimized for efficiency in power conversion applications

Low on-resistance for low power loss

Compact and space-saving surface mount package

Key Technical Parameters

Drain-to-Source Voltage: 55V

Gate-to-Source Voltage: ±20V

On-Resistance: 650mΩ

Continuous Drain Current: 540mA

Input Capacitance: 75pF

Power Dissipation: 360mW

Quality and Safety Features

Robust and reliable MOSFET design

Suitable for industrial and consumer applications

Compatibility

Compatible with various power conversion and control circuits

Application Areas

Power conversion

Motor control

Switching power supplies

General-purpose power switching

Product Lifecycle

Currently in active production

Replacements and upgrades may be available in the future

Several Key Reasons to Choose This Product

Optimized efficiency and low power loss

Compact surface mount package

Wide operating temperature range

Reliable and robust MOSFET design

Suitable for a variety of power conversion and control applications