Manufacturer Part Number
BSS670S2LH6327XTSA1
Manufacturer
Infineon Technologies
Introduction
The BSS670S2LH6327XTSA1 is a N-channel MOSFET transistor from Infineon's OptiMOS series.
Product Features and Performance
Drain to Source Voltage (Vdss) of 55V
Maximum Gate-Source Voltage (Vgs) of ±20V
On-Resistance (Rds(on)) of 650mΩ at 270mA, 10V
Continuous Drain Current (Id) of 540mA at 25°C
Input Capacitance (Ciss) of 75pF at 25V
Power Dissipation of 360mW at 25°C
Fast switching capability
Product Advantages
Excellent on-state resistance for low conduction losses
Robust design with high voltage and current handling capabilities
Suitable for a wide range of power management and switching applications
Key Technical Parameters
N-channel MOSFET
55V Drain-Source Voltage
±20V Maximum Gate-Source Voltage
650mΩ On-Resistance at 270mA, 10V
540mA Continuous Drain Current at 25°C
75pF Input Capacitance at 25V
360mW Power Dissipation at 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount applications
Compatibility
Compatible with a wide range of power electronic circuits and systems
Application Areas
Power management
Switching circuits
Motor control
LED driving
General-purpose power switching
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades are available
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Robust design with high voltage and current capabilities
Suitable for a wide range of power electronics applications
RoHS3 compliance for environmental responsibility
Availability of replacements and upgrades
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