BSS670S2LH6327XTSA1 - Infineon Technologies

Manufacturer Part Number

BSS670S2LH6327XTSA1

Manufacturer

Infineon Technologies

Introduction

The BSS670S2LH6327XTSA1 is a N-channel MOSFET transistor from Infineon's OptiMOS series.

Product Features and Performance

Drain to Source Voltage (Vdss) of 55V

Maximum Gate-Source Voltage (Vgs) of ±20V

On-Resistance (Rds(on)) of 650mΩ at 270mA, 10V

Continuous Drain Current (Id) of 540mA at 25°C

Input Capacitance (Ciss) of 75pF at 25V

Power Dissipation of 360mW at 25°C

Fast switching capability

Product Advantages

Excellent on-state resistance for low conduction losses

Robust design with high voltage and current handling capabilities

Suitable for a wide range of power management and switching applications

Key Technical Parameters

N-channel MOSFET

55V Drain-Source Voltage

±20V Maximum Gate-Source Voltage

650mΩ On-Resistance at 270mA, 10V

540mA Continuous Drain Current at 25°C

75pF Input Capacitance at 25V

360mW Power Dissipation at 25°C

Quality and Safety Features

RoHS3 compliant

Suitable for surface mount applications

Compatibility

Compatible with a wide range of power electronic circuits and systems

Application Areas

Power management

Switching circuits

Motor control

LED driving

General-purpose power switching

Product Lifecycle

Current product, not nearing discontinuation

Replacements and upgrades are available

Key Reasons to Choose This Product

Excellent performance-to-cost ratio

Robust design with high voltage and current capabilities

Suitable for a wide range of power electronics applications

RoHS3 compliance for environmental responsibility

Availability of replacements and upgrades