Manufacturer Part Number
SMSD602-RT1G
Manufacturer
onsemi
Introduction
High-performance NPN bipolar junction transistor (BJT) suitable for a wide range of applications.
Product Features and Performance
High DC current gain (hFE) of 120 minimum at 150mA, 10V
Low collector-emitter saturation voltage (VCE(sat)) of 600mV at 30mA, 300mA
Low collector cutoff current (ICBO) of 100nA maximum
Supports collector current (IC) of up to 500mA
Rated for a maximum collector-emitter voltage (VCEO) of 50V
Power dissipation of up to 200mW
Product Advantages
Excellent electrical characteristics for high-performance applications
Small and compact surface mount package (SC-59)
Tape and reel packaging for automated assembly
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 50V
Collector Current (IC): 500mA
Collector Cutoff Current (ICBO): 100nA
DC Current Gain (hFE): 120 minimum
Collector-Emitter Saturation Voltage (VCE(sat)): 600mV
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
Can be used as a replacement or upgrade for a wide range of NPN bipolar transistor applications.
Application Areas
Amplifiers
Switches
Logic circuits
Driver circuits
General-purpose electronics
Product Lifecycle
This product is currently in production and readily available. There are no plans for discontinuation, and suitable replacement options are available.
Key Reasons to Choose This Product
Excellent electrical performance for high-performance applications
Small, compact, and surface-mountable packaging
Reliable and durable construction
RoHS3 compliance for environmental considerations
Wide compatibility and availability for design flexibility
SMSD1002T1GonsemiTRANS NPN SOD123