SMSD602-RT1G - onsemi

Manufacturer Part Number

SMSD602-RT1G

Manufacturer

onsemi

Introduction

High-performance NPN bipolar junction transistor (BJT) suitable for a wide range of applications.

Product Features and Performance

High DC current gain (hFE) of 120 minimum at 150mA, 10V

Low collector-emitter saturation voltage (VCE(sat)) of 600mV at 30mA, 300mA

Low collector cutoff current (ICBO) of 100nA maximum

Supports collector current (IC) of up to 500mA

Rated for a maximum collector-emitter voltage (VCEO) of 50V

Power dissipation of up to 200mW

Product Advantages

Excellent electrical characteristics for high-performance applications

Small and compact surface mount package (SC-59)

Tape and reel packaging for automated assembly

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 50V

Collector Current (IC): 500mA

Collector Cutoff Current (ICBO): 100nA

DC Current Gain (hFE): 120 minimum

Collector-Emitter Saturation Voltage (VCE(sat)): 600mV

Quality and Safety Features

RoHS3 compliant

Reliable and durable construction

Compatibility

Can be used as a replacement or upgrade for a wide range of NPN bipolar transistor applications.

Application Areas

Amplifiers

Switches

Logic circuits

Driver circuits

General-purpose electronics

Product Lifecycle

This product is currently in production and readily available. There are no plans for discontinuation, and suitable replacement options are available.

Key Reasons to Choose This Product

Excellent electrical performance for high-performance applications

Small, compact, and surface-mountable packaging

Reliable and durable construction

RoHS3 compliance for environmental considerations

Wide compatibility and availability for design flexibility