Manufacturer Part Number
MJD112T4
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Products
Transistors Bipolar (BJT) Single
Product Features and Performance
ROHS3 Compliant
DPAK Packaging
Operating Temperature: 150°C (TJ)
Power Rating: 20 W
Collector-Emitter Breakdown Voltage: 100 V
Collector Current: 2 A (Max)
Collector Cutoff Current: 20 A (Max)
VCE Saturation Voltage: 3 V @ 40 mA, 4 A
DC Current Gain (hFE): 1000 @ 2 A, 3 V
Transition Frequency: 25 MHz
Product Advantages
High power handling capability
High voltage rating
High current rating
High DC current gain
Surface mountable
Key Technical Parameters
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Package: Tape & Reel (TR)
Transistor Type: NPN Darlington
Quality and Safety Features
ROHS3 Compliant
Compatibility
Surface Mount
Application Areas
Power amplifiers
Motor drivers
Switching circuits
Industrial control
Automotive electronics
Product Lifecycle
Available, not nearing discontinuation
Replacements and upgrades available
Key Reasons to Choose
High power and voltage handling
High current capability
High DC current gain
Surface mount design
Reliable and RoHS compliant