Manufacturer Part Number
MJD117-1G
Manufacturer
onsemi
Introduction
High-voltage, high-current PNP Darlington transistor
Product Features and Performance
Optimized for high-voltage, high-current switching applications
High DC current gain (minimum 1000 @ 2A, 3V)
High power dissipation capability (1.75W)
Wide operating temperature range (-65°C to 150°C)
High voltage rating (100V Collector-Emitter Breakdown Voltage)
High collector current rating (2A continuous, 20A peak)
Product Advantages
Excellent switching performance
Robust high-voltage and high-current handling capability
Compact TO-251-3 (I-PAK) package
Key Technical Parameters
Power Dissipation: 1.75W
Collector-Emitter Breakdown Voltage: 100V
Collector Current (Continuous/Peak): 2A/20A
DC Current Gain (hFE): Minimum 1000 @ 2A, 3V
Transition Frequency (fT): 25MHz
Quality and Safety Features
RoHS3 compliant
Through-hole mounting
Compatibility
Suitable for a wide range of high-voltage, high-current switching applications
Application Areas
Motor control
Industrial power supplies
Lighting control
Consumer electronics
Product Lifecycle
This is an active product, with no indication of discontinuation. Replacement or upgrade options are available.
Key Reasons to Choose This Product
Excellent high-voltage and high-current handling capability
High DC current gain for efficient switching performance
Wide operating temperature range for reliable operation
Compact and easy-to-use through-hole package
RoHS3 compliance for environmental responsibility