MJD117T4G - onsemi

Manufacturer Part Number

MJD117T4G

Manufacturer

onsemi

Introduction

The MJD117T4G is a high-performance PNP Darlington transistor suitable for a variety of power switching and amplification applications.

Product Features and Performance

High current handling capability up to 2A

High current gain of 1000 minimum

Capable of switching up to 25MHz

Wide operating temperature range of -65°C to 150°C

Low collector-emitter saturation voltage of 3V at 40mA, 4A

Product Advantages

Compact and efficient DPAK surface mount package

Robust and reliable performance

Suitable for high-power, high-current applications

Excellent switching and amplification characteristics

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 100V

Collector Current (Max): 2A

Collector Cutoff Current (Max): 20A

Power Dissipation (Max): 1.75W

Transition Frequency: 25MHz

Quality and Safety Features

RoHS3 compliant

Meets industry quality and reliability standards

Compatibility

Suitable for a wide range of power electronics, motor control, and industrial applications.

Application Areas

Power amplifiers

Motor drives

Switching power supplies

Industrial control systems

Product Lifecycle

The MJD117T4G is currently an active product. There are no known plans for discontinuation, and replacement or upgrade options are available if needed.

Key Reasons to Choose This Product

High-performance Darlington transistor with excellent current handling and switching capabilities

Compact and efficient DPAK package for space-constrained designs

Wide operating temperature range for reliable performance in diverse environments

RoHS3 compliance for use in environmentally conscious applications

Proven reliability and quality from a trusted manufacturer, onsemi