MJD117T4 - onsemi

Manufacturer Part Number

MJD117T4

Manufacturer

onsemi

Introduction

High-power PNP Darlington transistor for power amplifier and switching applications

Product Features and Performance

High current handling capability up to 20A

High current gain of 1000 (minimum) at 2A, 3V

High frequency transistion of 25MHz

Wide operating temperature range of -65°C to 150°C

Power dissipation up to 20W

Product Advantages

Robust performance for high-power applications

Compact and efficient DPAK package

Reliable and long-lasting operation

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 100V

Collector Current (Max): 2A

Collector Cutoff Current (Max): 20A

Collector-Emitter Saturation Voltage (Max): 2V @ 8mA, 2A

Quality and Safety Features

RoHS non-compliant

Compatibility

Surface mount DPAK (TO-252-3) package

Application Areas

Power amplifiers

Power switching circuits

Industrial and automotive electronics

Product Lifecycle

This product is an active and commonly used transistor. Replacements and upgrades may be available from the manufacturer.

Key Reasons to Choose

High current handling and gain for power applications

Robust design for reliable operation in harsh environments

Compact and efficient DPAK package for space-constrained designs

Wide operating temperature range for versatile usage