MJD117T4 - STMicroelectronics

Manufacturer Part Number

MJD117T4

Manufacturer

STMicroelectronics

Introduction

The MJD117T4 is a high-power PNP Darlington transistor suitable for a variety of power amplifier and driver applications.

Product Features and Performance

High power handling capability (20W)

High current gain (hFE min. 1000 @ 2A, 3V)

High voltage rating (100V collector-emitter breakdown voltage)

High collector current rating (2A continuous, 20A peak)

Low collector-emitter saturation voltage (3V @ 40mA, 4A)

Wide operating temperature range (-55°C to 150°C)

Fast switching speed (transition frequency of 25MHz)

Product Advantages

Excellent power handling and thermal management

Robust electrical characteristics for reliable operation

Compact surface mount DPAK package

Suitable for a wide range of power electronics applications

Key Technical Parameters

Power Dissipation: 20W

Voltage (Collector-Emitter Breakdown): 100V

Current (Collector): 2A continuous, 20A peak

Current Gain (hFE): 1000 min. @ 2A, 3V

Transition Frequency: 25MHz

Operating Temperature: -55°C to 150°C

Quality and Safety Features

ROHS3 compliant

Suitable for high-reliability applications

Compatibility

The MJD117T4 is a direct replacement for a variety of PNP Darlington transistors in power electronics applications.

Application Areas

Power amplifiers

Motor drivers

Switching power supplies

Industrial controls

Automotive electronics

Product Lifecycle

The MJD117T4 is an active and widely available product. Replacements and upgrades are readily available from STMicroelectronics and other manufacturers.

Key Reasons to Choose This Product

Excellent power handling and thermal management capabilities

Robust electrical characteristics for reliable operation

Compact surface mount package for efficient board layout

Suitable for a wide range of power electronics applications

Readily available and actively supported by the manufacturer