Manufacturer Part Number
MJD112T4G
Manufacturer
onsemi
Introduction
The MJD112T4G is a high-power NPN Darlington transistor designed for high-current switching and amplifier applications.
Product Features and Performance
High current handling capability up to 20A
High voltage rating up to 100V
High current gain of 1000 at 2A and 3V
High frequency transition up to 25MHz
Suitable for high-power switching and amplifier applications
Product Advantages
Efficient high-current operation
High voltage and power handling
Compact DPAK surface-mount package
Reliable and durable performance
Key Technical Parameters
Power Rating: 20W
Collector-Emitter Breakdown Voltage: 100V
Collector Current (Max): 2A
Collector Cutoff Current (Max): 20A
Vce Saturation (Max): 3V @ 40mA, 4A
DC Current Gain (Min): 1000 @ 2A, 3V
Transition Frequency: 25MHz
Quality and Safety Features
RoHS3 compliant
Industrial-grade quality and reliability
Compatibility
The MJD112T4G is compatible with a wide range of high-power circuit designs and applications.
Application Areas
High-power switching circuits
Motor control
Power amplifiers
Industrial electronics
Automotive electronics
Product Lifecycle
The MJD112T4G is an active and readily available product. There are no plans for its discontinuation, and suitable replacement or upgrade options are available.
Key Reasons to Choose the MJD112T4G
Robust high-current and high-voltage performance
Efficient and reliable operation
Compact and easy-to-use DPAK package
Wide temperature range and industrial-grade quality
Readily available and actively supported by the manufacturer