MJD112-1G - onsemi

Manufacturer Part Number

MJD112-1G

Manufacturer

onsemi

Introduction

The MJD112-1G is a high-performance NPN Darlington transistor suitable for a wide range of power switching applications.

Product Features and Performance

Power rating of 1.75W

Collector-Emitter breakdown voltage of 100V

Collector current rating of 2A

Collector cutoff current of 20A

Low Vce(sat) of 3V @ 40mA, 4A

High DC current gain of 1000 @ 2A, 3V

Transition frequency of 25MHz

Product Advantages

Excellent power handling capability

High current gain for efficient switching

High voltage rating for versatile applications

Fast switching speed

Key Technical Parameters

Power Rating: 1.75W

Collector-Emitter Breakdown Voltage: 100V

Collector Current: 2A

Collector Cutoff Current: 20A

Vce(sat): 3V @ 40mA, 4A

DC Current Gain: 1000 @ 2A, 3V

Transition Frequency: 25MHz

Quality and Safety Features

RoHS3 compliant

I-PAK package for reliable heat dissipation

Compatibility

Through-hole mounting

Suitable for a wide range of power switching applications

Application Areas

Power supplies

Motor drives

Amplifiers

Switching circuits

Product Lifecycle

This product is currently in production and available for purchase.

Replacements or upgrades may be available in the future, but the MJD112-1G remains a widely used and supported part.

Key Reasons to Choose This Product

Excellent power handling and current capability

High voltage rating for versatile applications

Fast switching speed for efficient power conversion

Reliable and robust I-PAK package

Widely used and supported by the manufacturer