MJD112T4 - onsemi

Manufacturer Part Number

MJD112T4

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

NPN Darlington Transistor

Product Features and Performance

Power Rating: 20 W

Collector-Emitter Voltage (max): 100 V

Collector Current (max): 2 A

Collector Cutoff Current (max): 20 A

Collector-Emitter Saturation Voltage (max): 2 V @ 8 mA, 2 A

DC Current Gain (min): 1000 @ 2 A, 3 V

Transition Frequency: 25 MHz

Operating Temperature: -65°C to 150°C

Product Advantages

High power handling capability

High current gain

High switching speed

Key Technical Parameters

Collector-Emitter Breakdown Voltage

Collector Current

Collector Cutoff Current

Collector-Emitter Saturation Voltage

DC Current Gain

Transition Frequency

Operating Temperature Range

Quality and Safety Features

RoHS non-compliant

Compatibility

Surface mount package (DPAK)

Application Areas

Power amplifiers

Motor drives

Switching circuits

Relay drivers

Product Lifecycle

Active component

Replacements or upgrades may be available

Key Reasons to Choose

High power handling

High current gain

High switching speed

Suitable for power amplifier, motor drive, and switching applications