BC850CLT1G - onsemi

Manufacturer Part Number

BC850CLT1G

Manufacturer

onsemi

Introduction

High-performance NPN bipolar junction transistor

Product Features and Performance

Compact SOT-23-3 surface mount package

Operating temperature range: -55°C to 150°C

Power rating: 225 mW

Collector-emitter breakdown voltage: 45 V

Collector current: 100 mA

Collector cutoff current: 15 nA

Low collector-emitter saturation voltage

High DC current gain: Minimum of 420 @ 2 mA, 5 V

Transition frequency: 100 MHz

Product Advantages

Excellent performance characteristics

High reliability

Compact and space-saving design

Suitable for a wide range of applications

Key Technical Parameters

Package: SOT-23-3

Transistor type: NPN

Collector-emitter breakdown voltage: 45 V

Collector current: 100 mA

DC current gain: Minimum of 420

Transition frequency: 100 MHz

Quality and Safety Features

RoHS3 compliant

Reliable construction and materials

Compatibility

Suitable for use in a variety of electronic circuits and applications

Application Areas

Amplifiers

Switches

Logic gates

General-purpose electronic circuits

Product Lifecycle

This product is an active and widely available part

Replacement or upgrade options may be available from the manufacturer or other sources

Key Reasons to Choose This Product

Excellent electrical performance characteristics

Compact and space-saving design

Wide operating temperature range

High reliability and quality

Suitable for a broad range of applications