Manufacturer Part Number
FQP20N06
Manufacturer
onsemi
Introduction
Power MOSFET transistor
Designed for power switching and amplifying applications
Product Features and Performance
MOSFET (Metal Oxide Semiconductor Field Effect Transistor) device
N-channel enhancement mode
60V drain-source voltage
20A continuous drain current at 25°C
60mΩ on-resistance at 10A, 10V
590pF input capacitance at 25V
15nC gate charge at 10V
-55°C to 175°C operating temperature range
Product Advantages
High current handling capability
Low on-resistance for efficient power conversion
Fast switching speed
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±25V
Continuous Drain Current (Id): 20A at 25°C
On-Resistance (Rds(on)): 60mΩ at 10A, 10V
Input Capacitance (Ciss): 590pF at 25V
Power Dissipation: 53W at 25°C
Quality and Safety Features
RoHS3 compliant
TO-220-3 package for reliable thermal performance
Compatibility
Suitable for power switching and amplifying applications
Application Areas
Power supplies
Motor drives
Inverters
Converters
Product Lifecycle
Currently available
No plans for discontinuation
Key Reasons to Choose This Product
High current capability
Low on-resistance for efficient power conversion
Fast switching speed
Reliable thermal performance in TO-220-3 package
Suitable for a wide range of power electronics applications