Manufacturer Part Number
FQP19N20
Manufacturer
onsemi
Introduction
The FQP19N20 is a high-performance N-channel power MOSFET transistor from onsemi, designed for a wide range of power switching and control applications.
Product Features and Performance
200V drain-to-source voltage rating
4A continuous drain current at 25°C
150mΩ maximum on-state resistance at 9.7A and 10V gate-to-source voltage
1600pF maximum input capacitance at 25V drain-to-source voltage
140W maximum power dissipation at 25°C case temperature
N-channel enhancement-mode MOSFET technology
Product Advantages
Robust and reliable performance
Efficient power switching and control
Suitable for a wide range of applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 200V
Gate-to-Source Voltage (Vgs Max): ±30V
On-State Resistance (Rds(on) Max): 150mΩ @ 9.7A, 10V
Continuous Drain Current (Id): 19.4A @ 25°C
Input Capacitance (Ciss Max): 1600pF @ 25V
Power Dissipation (Max): 140W @ 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation up to 150°C junction temperature
Compatibility
Through-hole mounting in TO-220-3 package
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
General power switching and control applications
Product Lifecycle
Currently in production
Availability of replacement or upgraded parts is likely
Key Reasons to Choose This Product
Excellent performance and reliability in power switching applications
Robust design and wide operating temperature range
RoHS3 compliance for environmental compatibility
Suitable for a variety of power electronics applications