Manufacturer Part Number
FQP19N20
Manufacturer
Fairchild (onsemi)
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
TO-220-3 package
QFET series
N-Channel MOSFET
Drain to Source Voltage (Vdss): 200V
Vgs (Max): ±30V
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.7A, 10V
Current Continuous Drain (Id) @ 25°C: 19.4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Product Advantages
High voltage and current handling capabilities
Low on-resistance for efficient power switching
Suitable for a wide range of applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 200V
Vgs (Max): ±30V
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.7A, 10V
Current Continuous Drain (Id) @ 25°C: 19.4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Power Dissipation (Max): 140W (Tc)
Quality and Safety Features
Operating Temperature: -55°C ~ 150°C (TJ)
Complies with industry standards and regulations
Compatibility
Through Hole mounting
Suitable for a wide range of electronic circuits and applications
Application Areas
Power supplies
Motor drives
Inverters
Switch-mode power supplies
Industrial and consumer electronics
Product Lifecycle
Current production model
Replacements and upgrades may be available
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for efficient power switching
Suitable for a wide range of applications
Proven reliability and performance
Compatible with various electronic circuits and applications
