Manufacturer Part Number
FQP19N20C
Manufacturer
onsemi
Introduction
The FQP19N20C is a Discrete Semiconductor Product, specifically a Transistor - FET, MOSFET - Single.
Product Features and Performance
N-Channel MOSFET
200V Drain-to-Source Voltage
19A Continuous Drain Current
170mOhm On-Resistance
1080pF Input Capacitance
139W Power Dissipation
-55°C to 150°C Operating Temperature Range
Product Advantages
High voltage and current handling capabilities
Low on-resistance for efficient power conversion
Wide operating temperature range
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 200V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 170mOhm
Continuous Drain Current (Id): 19A
Input Capacitance (Ciss): 1080pF
Power Dissipation (Tc): 139W
Quality and Safety Features
ROHS3 compliant
TO-220-3 package for reliable thermal performance
Compatibility
Suitable for a wide range of power electronic applications
Application Areas
Power supplies
Motor drives
Switching regulators
Inverters
Industrial equipment
Product Lifecycle
Current product
Replacements and upgrades available
Key Reasons to Choose This Product
High voltage and current handling capability
Low on-resistance for efficient power conversion
Wide operating temperature range
Reliable TO-220-3 package
Suitable for a variety of power electronic applications
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