Manufacturer Part Number
FQP20N06L
Manufacturer
onsemi
Introduction
The FQP20N06L is a discrete N-channel MOSFET transistor from onsemi, designed for power switching and amplification applications.
Product Features and Performance
High current handling capability up to 21A continuous drain current
Low on-resistance of 55 mΩ @ 10.5A, 10V
Wide operating temperature range of -55°C to 175°C
High drain-to-source voltage rating of 60V
Fast switching speed and low gate charge of 13 nC @ 5V
Product Advantages
Efficient power handling and low power loss
Reliable operation in a wide range of applications
Compact TO-220-3 package for easy integration
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 55 mΩ @ 10.5A, 10V
Continuous Drain Current (Id): 21A @ 25°C
Input Capacitance (Ciss): 630 pF @ 25V
Power Dissipation (Tc): 53W
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Through-hole mounting in TO-220-3 package
Application Areas
Power supplies
Motor drives
Switching regulators
Inverters
Amplifiers
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options available from onsemi
Key Reasons to Choose This Product
High current and power handling capability
Low on-resistance for efficient power conversion
Wide temperature range for versatile applications
Fast switching speed and low gate charge for high-frequency operation
Reliable and RoHS-compliant design for quality assurance
