Manufacturer Part Number
FQP22N30
Manufacturer
Fairchild (onsemi)
Introduction
High-power N-channel MOSFET transistor with excellent performance and reliability
Product Features and Performance
High drain-to-source voltage rating of 300V
Low on-resistance of 160mOhm @ 10.5A, 10V
Capable of handling up to 21A of continuous drain current at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge of 60nC @ 10V
High power dissipation capacity of 170W at Tc
Product Advantages
Suitable for high-voltage, high-power switching applications
Excellent reliability and durability
Efficient heat dissipation enables high-power operation
Fast switching capability for improved circuit performance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 300V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 160mOhm @ 10.5A, 10V
Continuous Drain Current (Id): 21A @ 25°C
Input Capacitance (Ciss): 2200pF @ 25V
Power Dissipation (Ptot): 170W @ Tc
Quality and Safety Features
Manufactured to high-quality standards for reliability and durability
Suitable for safety-critical applications due to its robust design
Compatibility
Compatible with a wide range of electronic circuits and power systems
Application Areas
Switching power supplies
Motor drives
Industrial control systems
Automotive electronics
Appliances and home electronics
Product Lifecycle
Current production model, no discontinuation or replacement plans announced
Key Reasons to Choose This Product
High voltage and current handling capabilities
Excellent thermal management for high-power operation
Fast switching speed for improved circuit efficiency
Proven reliability and durability for critical applications
Broad compatibility with various electronic systems and designs
