Manufacturer Part Number
FQP22N30
Manufacturer
onsemi
Introduction
The FQP22N30 is a high-performance N-channel MOSFET transistor from onsemi, suitable for various power electronics and switching applications.
Product Features and Performance
300V drain-to-source voltage rating
21A continuous drain current rating at 25°C
Low on-resistance of 160mΩ @ 10.5A, 10V
Fast switching with low gate charge of 60nC @ 10V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power handling and efficiency
Robust design for reliable operation
Suitable for high-voltage and high-current applications
Easy to drive and integrate into circuits
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 300V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 160mΩ @ 10.5A, 10V
Drain Current (Id): 21A @ 25°C
Input Capacitance (Ciss): 2200pF @ 25V
Power Dissipation (Tc): 170W
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments with wide temperature range
Robust and reliable construction
Compatibility
Typical MOSFET driver circuits and control systems
Application Areas
Switching power supplies
Motor drives
Inverters and converters
Industrial and medical equipment
Automotive electronics
Product Lifecycle
Currently in production
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
High power handling and efficiency
Reliable and robust design
Easy to integrate into various circuits
Suitable for a wide range of power electronics applications