Manufacturer Part Number
FGHL75T65MQD
Manufacturer
onsemi
Introduction
High performance trench field stop IGBT designed for use in industrial and consumer power electronics applications.
Product Features and Performance
Trench Field Stop IGBT technology
650V collector-emitter voltage rating
80A collector current rating
Low Vce(on) of 1.8V at 75A
Fast switching with 36ns reverse recovery time
145nC gate charge for efficient gate drive
300A pulsed collector current rating
Wide operating temperature range of -55°C to 175°C
Product Advantages
Optimized for high efficiency power conversion
Robust design with high short-circuit withstand capability
Reduced switching losses for improved system efficiency
Compact TO-247-3 package for high power density designs
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 650V
Collector Current (IC): 80A
Collector-Emitter Saturation Voltage (VCE(sat)): 1.8V @ 15V, 75A
Reverse Recovery Time (trr): 36ns
Gate Charge (Qg): 145nC
Quality and Safety Features
ROHS3 compliant
TO-247-3 industry standard package
Compatibility
Compatible with various industrial and consumer power electronics applications.
Application Areas
Motor drives
Uninterruptible power supplies (UPS)
Renewable energy inverters
Industrial power supplies
Home appliances
Product Lifecycle
This product is an active, currently available part from onsemi. No discontinuation or replacement information is provided.
Key Reasons to Choose
High efficiency and performance with trench field stop IGBT technology
Robust design with high short-circuit capability
Fast switching and low switching losses
Wide operating temperature range
Industry standard TO-247-3 package for easy integration
FGH80N60FD2Fairchild (onsemi)