Manufacturer Part Number
FGHL50T65SQDT
Manufacturer
onsemi
Introduction
High power density trench field stop IGBT
Product Features and Performance
650V blocking voltage
100A collector current rating
1V max collector-emitter saturation voltage
7nC gate charge
223J turn-on, 91.13J turn-off energy
8ns turn-on, 70ns turn-off delay times
Designed for high efficiency power conversion applications
Product Advantages
Optimized for high frequency, high efficiency operation
Exceptional performance and ruggedness
Trench field stop technology for low on-state losses
High short-circuit withstand capability
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 650V
Current Collector (Ic) (Max): 100A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Gate Charge: 99.7nC
Current Collector Pulsed (Icm): 200A
Switching Energy: 223J (on), 91.13J (off)
Td (on/off) @ 25°C: 22.8ns/70ns
Quality and Safety Features
ROHS3 compliant
Qualified to AEC-Q101 automotive standards
Compatibility
Compatible with standard IGBT gate drive circuits
Application Areas
Inverters
Converters
Motor drives
Power supplies
Welding
Induction heating
Product Lifecycle
This is an active, in-production part. No known plans for discontinuation.
Key Reasons to Choose This Product
High power density and efficiency for compact, high-performance power conversion designs
Optimized for high frequency, high efficiency operation
Exceptional performance and ruggedness with trench field stop technology
High short-circuit withstand capability
Qualified to automotive standards for reliability and quality
FGH75T65SQDFairchild (onsemi)