Manufacturer Part Number
FGH80N60FDTU
Manufacturer
onsemi
Introduction
IGBT (Insulated Gate Bipolar Transistor) power device
Product Features and Performance
Field Stop IGBT technology
600V Collector-Emitter Breakdown Voltage
80A Collector Current
4V Collector-Emitter Saturation Voltage @ 15V Gate, 40A Collector
36ns Reverse Recovery Time
120nC Gate Charge
160A Pulsed Collector Current
1mJ Turn-On Switching Energy, 520μJ Turn-Off Switching Energy
21ns Turn-On Delay Time, 126ns Turn-Off Delay Time
Product Advantages
Improved power efficiency
Reduced switching losses
Fast switching capability
Rugged design
Key Technical Parameters
Voltage Rating: 600V
Current Rating: 80A
Package: TO-247-3
Quality and Safety Features
ROHS3 Compliant
Operating Temperature Range: -55°C to 150°C
Compatibility
Designed for use in power conversion, motor drives, and other industrial applications
Application Areas
Power conversion
Motor drives
Industrial equipment
Product Lifecycle
Current production status
Availability of replacement or upgraded models
Key Reasons to Choose This Product
High performance IGBT with field stop technology
Low conduction and switching losses
Rugged and reliable design
Suitable for a wide range of power conversion applications