Manufacturer Part Number
FGH75T65SQDT-F155
Manufacturer
onsemi
Introduction
This product is a discrete semiconductor device, specifically a Trench Field Stop IGBT (Insulated Gate Bipolar Transistor) transistor.
Product Features and Performance
High power handling capability up to 375 W
Low Vce(on) of 2.1V at 75A, 15V
Fast switching with turn-on time of 23ns and turn-off time of 120ns
Low reverse recovery time of 76ns
High collector current rating of up to 150A
Wide operating temperature range of -55°C to 175°C
Product Advantages
Efficient power conversion with low conduction and switching losses
Robust and reliable performance in high-power applications
Compact TO-247-3 package for easy integration
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 650V
Collector Current (Max): 150A
Pulsed Collector Current: 300A
Gate Charge: 128nC
Switching Energy: 300J (on), 70J (off)
Quality and Safety Features
RoHS3 compliant for environmental safety
Reliable through-hole mounting design
Compatibility
This IGBT transistor is compatible with a wide range of high-power electrical and electronic applications.
Application Areas
Motor drives
Power inverters
Uninterruptible power supplies (UPS)
Welding equipment
Industrial heating and control systems
Product Lifecycle
This product is currently in active production and distribution. Replacements and upgrades may be available in the future as technology evolves.
Key Reasons to Choose This Product
High power handling and efficient performance for demanding applications
Robust and reliable design with wide operating temperature range
Fast switching capabilities for improved system efficiency
Compact and easy-to-integrate package
Compliance with RoHS3 environmental regulations
FGH75T65SHDTL4Fairchild SemiconductorINSULATED GATE BIPOLAR TRANSISTO