Manufacturer Part Number
FGH75T65SHDTL4
Manufacturer
Fairchild (onsemi)
Introduction
High-performance IGBT transistor for power electronics applications
Product Features and Performance
Field Stop IGBT technology
High power density
Low on-state voltage (Vce(on))
Fast switching speed
Low switching losses
High current handling capability
Wide operating temperature range (-55°C to 175°C)
Product Advantages
Efficient power conversion
Compact and reliable design
Suitable for high-power applications
Key Technical Parameters
Collector-Emitter Voltage (VCES): 650V
Collector Current (IC): 150A
Collector-Emitter Saturation Voltage (VCE(on)): 2.1V @ 15V, 75A
Reverse Recovery Time (trr): 76ns
Gate Charge (Qg): 126nC
Pulsed Collector Current (ICM): 300A
Switching Energy (Eon/Eoff): 1.06mJ/1.56mJ
Quality and Safety Features
Robust TO-247-4 package
Suitable for high-voltage, high-current applications
Complies with safety and reliability standards
Compatibility
Designed for use in power electronics circuits
Suitable for industrial, automotive, and renewable energy applications
Application Areas
Motor drives
Power inverters
Uninterruptible power supplies (UPS)
Solar inverters
Welding equipment
Induction heating systems
Product Lifecycle
This product is an active and widely used IGBT transistor
Replacements and upgrades are readily available from the manufacturer
Several Key Reasons to Choose This Product
High power density and efficiency
Fast switching speed and low switching losses
Wide operating temperature range
Robust and reliable TO-247-4 package
Suitable for a wide range of high-power applications
Extensive support and availability from the manufacturer
FGH75T60UDFairchild (onsemi)