Manufacturer Part Number
FGH75T65SHD-F155
Manufacturer
onsemi
Introduction
High-performance IGBT transistor designed for a variety of industrial and consumer applications
Product Features and Performance
Trench field stop IGBT technology
High current and voltage handling capability
Low on-state voltage drop
Fast switching speed
Low switching losses
Wide operating temperature range (-55°C to 175°C)
High power density
Product Advantages
Excellent power conversion efficiency
Reliable and robust design
Suitable for high-power applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage (max): 650V
Collector Current (max): 150A
On-state Voltage Drop (max): 2.1V @ 15V, 75A
Reverse Recovery Time: 43.4ns
Gate Charge: 123nC
Collector Pulsed Current (max): 225A
Quality and Safety Features
RoHS3 compliant
TO-247-3 package for reliable thermal performance
Comprehensive quality and reliability testing
Compatibility
Suitable for a wide range of power electronics applications, including motor drives, power supplies, and inverters
Application Areas
Industrial automation
Renewable energy systems
Electric vehicles
Home appliances
Product Lifecycle
This product is currently in active production and availability is stable.
Key Reasons to Choose This Product
High performance and efficiency for demanding power electronics applications
Reliable and robust design for long-term operation
Comprehensive technical specifications and safety features
Compatibility with a wide range of power electronics systems
Stable product availability and lifecycle support from onsemi
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