Manufacturer Part Number
FGH75T65SHDTL4
Manufacturer
onsemi
Introduction
High-performance IGBT transistor for industrial and power conversion applications.
Product Features and Performance
High power handling capability up to 455W
Fast switching and low conduction losses
Field-stop IGBT technology for improved performance
Operating temperature range of -55°C to 175°C
High collector-emitter breakdown voltage of 650V
High collector current up to 150A continuous, 300A pulsed
Low on-state voltage drop of 2.1V at 75A, 15V gate voltage
Fast turn-on and turn-off times of 55ns and 189ns respectively
Product Advantages
Efficient power conversion with low losses
Reliable and robust performance in harsh environments
Compact and easy to integrate design
Key Technical Parameters
Collector-emitter breakdown voltage: 650V
Collector current (continuous/pulsed): 150A/300A
On-state voltage drop: 2.1V @ 75A, 15V
Reverse recovery time: 76ns
Gate charge: 126nC
Switching energies: 1.06mJ (turn-on), 1.56mJ (turn-off)
Quality and Safety Features
RoHS3 compliant
TO-247-4 package with sturdy construction
Compatibility
Direct replacement for similar IGBT devices in power conversion and industrial applications
Application Areas
Industrial motor drives
Power inverters and converters
Welding equipment
Uninterruptible power supplies (UPS)
Renewable energy systems
Product Lifecycle
Currently in active production
No plans for discontinuation at this time
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose This Product
High power handling and efficiency for improved system performance
Reliable and robust design for use in harsh environments
Fast switching and low losses for energy-efficient power conversion
Wide operating temperature range for versatile applications
Easy integration with standard TO-247-4 package
