Manufacturer Part Number
FGH75T65SQDNL4
Manufacturer
onsemi
Introduction
High voltage, high current IGBT transistor
Product Features and Performance
Trench Field Stop IGBT technology
650V Collector-Emitter Breakdown Voltage
200A Collector Current (Max)
1V Collector-Emitter Saturation Voltage @ 75A
134ns Reverse Recovery Time
152nC Gate Charge
375W Power Dissipation (Max)
-55°C to 175°C Operating Temperature Range
Product Advantages
High efficiency and fast switching
Compact and rugged design
Excellent thermal performance
Key Technical Parameters
IGBT Type: Trench Field Stop
Collector-Emitter Breakdown Voltage: 650V
Collector Current: 200A (Max)
Collector-Emitter Saturation Voltage: 2.1V @ 15V, 75A
Reverse Recovery Time: 134ns
Gate Charge: 152nC
Power Dissipation: 375W (Max)
Operating Temperature: -55°C to 175°C
Quality and Safety Features
RoHS3 compliant
TO-247-4L package for through-hole mounting
Compatibility
Compatible with various power electronics applications
Application Areas
Motor drives
Power supplies
Welding equipment
Induction heating
Servo drives
Uninterruptible power supplies (UPS)
Product Lifecycle
Currently available
No known plans for discontinuation
Replacements and upgrades available if needed
Key Reasons to Choose This Product
High voltage and current handling capability
Fast switching and low conduction losses
Compact and rugged design for reliable operation
Wide operating temperature range
RoHS3 compliance for environmental responsibility
