The PMV65XP represents an elegant example of a P-channel enhancement-mode field-effect transistor (FET), nestled within a sleek SOT23 plastic casing. Harnessing the power of advanced trench MOSFET technology, this model brings a sense of reliability and swiftness to electronic switching. With its characteristic low on-resistance and rapid switching capabilities, it superbly supports applications in electronics where precision and efficiency are intrinsically valued. Within trench MOSFET technology lies a breakthrough structural design, featuring an etched vertical channel in the silicon substrate. This paradigm shift notably reduces on-resistance, thereby boosting conductivity and minimizing power dissipation during operation. Practical effects manifest in the elongated battery life for portable gadgets and enhanced energy efficiency within power management circuits.
Admired for its compactness and durability, the SOT23 package facilitates innovation within constrained circuit board spaces. This miniaturization aligns perfectly with the demands of contemporary electronic devices, often translating into augmented design versatility and reduced manufacturing expenditures. The PMV65XP finds a thriving ecosystem in electronic circuits, particularly in power management systems for portable devices. Its unique attributes fulfill the adaptive performance requirements of these gadgets. Within the industrial landscape and automotive frameworks, the PMV65XP stands as a paragon of reliability and toughness. Even amidst the unpredictability of voltage variations, it consistently delivers performance. Its trench technology is well-suited for challenging environments that demand durability, illustrating its role in pioneering innovative industrial solutions, affirming its value to stakeholders who strive for reliability and longevity.
• Diminished Threshold Voltage: The reduced threshold voltage of the PMV65XP plays a role in improving power efficiency. By activating at a lower voltage, the device reduces energy wastage and prolongs battery life in portable gadgets.
• Lowered On-State Resistance: Minimizing on-state resistance aids in curtailing power loss during conduction. The PMV65XP's low on-state resistance ensures minimal power dissipation as heat, thus boosting efficiency and prolonging the device lifespan by preventing overheating. Findings from various applications highlight a direct connection between reduced on-state resistance and improved device performance and durability.
• Sophisticated Trench MOSFET Technology: Incorporating advanced Trench MOSFET technology, the PMV65XP greatly enhances its reliability and efficiency. This technology enables higher power density and superior management of current flow, aligning with the rigorous demands of state-of-the-art electronics.
• Reliability Augmentation: The PMV65XP's reliability is a distinct benefit for aiming to develop robust electronic systems. In circuit design, the assurance of stable performance under varying conditions is frequently highlighted. Through offering this trustworthiness, the PMV65XP becomes a preferred component for advanced applications, like telecommunications and automotive industries.
A predominant application of the PMV65XP is found within low-power DC-DC converters. These converters play a role in adjusting voltage levels to suit the demands of specific electronic components by optimizing power consumption. The PMV65XP excels in minimizing energy losses within this framework, consideration for manufacturers striving to enhance the durability and dependability of their products. This emphasis on efficiency mirrors industry tendencies towards developing more environmentally friendly and energy-aware innovations.
In load switching, the PMV65XP facilitates rapid and dependable switching of loads, guaranteeing smooth device functionality and adherence to performance criteria. This is particularly needed in dynamic settings where device operation modes shift frequently. Proficient load management can prolong device life and curb wear and tear.
Within battery management systems, the PMV65XP provides substantial support by orchestrating power distribution adeptly. Ensuring efficient battery use underpins the extended use of devices, a growing demand in electronics. By aiding in the regulation and monitoring of charging cycles, the PMV65XP plays a role in safeguarding battery health, directly influencing satisfaction and a device's competitiveness in the marketplace.
The deployment of PMV65XP is markedly beneficial in portable battery-powered devices where energy preservation is required. As these devices strive for longer operation on finite power reserves, the PMV65XP's proficient power management guarantees extended battery life.
Technical specifications, characteristics, and parameters of the PMV65XP, along with components that share similar specifications to the Nexperia USA Inc. PMV65XPVL.
Type |
Parameter |
Factory Lead Time |
4 Weeks |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Transistor Element Material |
SILICON |
Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
Power Dissipation (Max) |
480mW Ta |
Packaging |
Tape & Reel (TR) |
Part Status |
Active |
Terminal Position |
DUAL |
Pin Count |
3 |
JESD-30 Code |
R-PDSO-G3 |
Operating Mode |
ENHANCEMENT MODE |
Transistor Application |
SWITCHING |
Vgs(th) (Max) @ Id |
900mV @ 250μA |
Mounting Type |
Surface Mount |
Surface Mount |
YES |
Current - Continuous Drain (Id) @ 25°C |
2.8A Ta |
Number of Elements |
1 |
Operating Temperature |
-55°C~150°C TJ |
Published |
2013 |
Number of Terminations |
3 |
Terminal Form |
GULL WING |
Reference Standard |
IEC-60134 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
74m Ω @ 2.8A, 4.5V |
Input Capacitance (Ciss) (Max) @ Vds |
744pF @ 20V |
Gate Charge (Qg) (Max) @ Vgs |
7.7nC @ 4V |
Vgs (Max) |
±12V |
Drain Current-Max (Abs) (ID) |
2.8A |
DS Breakdown Voltage-Min |
20V |
Drain to Source Voltage (Vdss) |
20V |
JEDEC-95 Code |
TO-236AB |
Drain-source On Resistance-Max |
0.0740ohm |
RoHS Status |
ROHS3 Compliant |
Since its inception in 2017, Nexperia has consistently positioned itself as a leader in the discrete, logic, and MOSFET semiconductor sectors. Their prowess translates into creating components like the PMV65XP, designed to meet rigorous automotive criteria. Adhering to these criteria guarantees the reliability and efficiency that advanced automotive systems avidly seek today, echoing the very essence of what drives this technological realm. The crafting of PMV65XP by Nexperia highlights a dedication to meeting demanding automotive requirements. These requirements call for more than mere conformity; they necessitate a finesse in adjusting to swiftly changing technological arenas. Through innovative research and development, Nexperia guarantees components deliver superior power management and maintain thermal balance even in demanding circumstances. This method reflects a larger movement towards valuing energy thriftiness and future-ready designs. The evolution and creation of PMV65XP by Nexperia represent a seamless integration of dedication to maintaining high standards, commitment to optimal power and thermal oversight, and a forward-thinking vision in line with future automotive advancements. This comprehensive strategy positions them as a benchmark for others within the semiconductor landscape.
All Dev Label Chgs 2/Aug/2020.pdf
Pack/Label Update 30/Nov/2016.pdf
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Within P-channel MOSFETs, holes act as the primary carriers facilitating current within the channel, setting the stage for current to flow when activated. This process plays a role in scenarios where precise power control is desired, reflecting the intricate interplay of ingenuity and technical necessity.
For P-channel MOSFETs to function, a negative gate-source voltage is required. This unique condition enables current to navigate the device in a direction contrary to conventional flow, a characteristic rooted in the channel’s structural design. This behavior often finds its use in circuits demanding high levels of efficiency and meticulous control, embodying the pursuit of optimization and mastery over technology.
The designation "field-effect transistor" is derived from its operating principle, which involves employing an electric field to influence charge carriers within a semiconductor channel. This principle showcases the flexibility of FETs across numerous electronic amplification and switching contexts, highlighting their dynamic role in modern technological applications.
Field-effect transistors comprise MOSFETs, JFETs, and MESFETs. Each variant offers distinct characteristics and benefits suited for particular functions. This assortment exemplifies the depth of engineering creativity in shaping semiconductor technology to address a wide spectrum of electronic demands, capturing the essence of adaptability and resourcefulness.
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