Manufacturer Part Number
FQPF19N20C
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET with low on-resistance and high current capability.
Product Features and Performance
High drain-source voltage capability up to 200V
Low on-resistance down to 170 mΩ
High continuous drain current up to 19A
Wide operating temperature range of -55°C to 150°C
Fast switching speed with low gate charge
Product Advantages
Excellent power handling capability
Efficient power conversion and control
Reliable and robust performance
Suitable for a wide range of power applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 200V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 170 mΩ @ 9.5A, 10V
Continuous Drain Current (Id): 19A @ 25°C
Input Capacitance (Ciss): 1080 pF @ 25V
Power Dissipation (Ptot): 43W @ Tc
Quality and Safety Features
RoHS3 compliant
Through-hole mounting in TO-220F-3 package
Compatibility
Suitable for a wide range of power electronics and control applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Amplifiers
Lighting and LED drivers
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options available from onsemi
Key Reasons to Choose This Product
High power handling and efficiency
Low on-resistance for improved power conversion
Wide operating temperature range for versatile applications
Reliable and robust performance for long-term use
RoHS3 compliance for environmental responsibility
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