Manufacturer Part Number
FQPF19N10
Manufacturer
Fairchild (onsemi)
Introduction
High-performance N-Channel MOSFET in a TO-220 package
Product Features and Performance
Wide operating temperature range of -55°C to 175°C
High drain-source voltage rating of 100V
Low on-resistance (RDS(on)) of 100mΩ @ 6.8A, 10V
High continuous drain current (ID) of 13.6A at 25°C
Fast switching capabilities with low input capacitance (Ciss) of 780pF @ 25V
High power dissipation capability of 38W
Product Advantages
Excellent thermal management for high-power applications
Reliable performance in harsh environments
Efficient power conversion with low conduction losses
Versatile in a wide range of power electronic designs
Key Technical Parameters
Drain-Source Voltage (VDS): 100V
Gate-Source Voltage (VGS): ±25V
On-Resistance (RDS(on)): 100mΩ @ 6.8A, 10V
Continuous Drain Current (ID): 13.6A @ 25°C
Input Capacitance (Ciss): 780pF @ 25V
Power Dissipation (Pd): 38W
Quality and Safety Features
Robust TO-220 package for reliable operation
Designed and manufactured to high quality standards
Complies with industry safety and environmental regulations
Compatibility
Compatible with a wide range of power electronic circuits and systems
Suitable for use in various power conversion and control applications
Application Areas
Switching power supplies
Motor drives
Home appliances
Industrial automation equipment
Lighting systems
Product Lifecycle
This product is currently in active production
Replacement or upgrades may be available in the future as technology evolves
Key Reasons to Choose This Product
High efficiency and low power losses for improved system performance
Reliable operation in harsh environments due to wide temperature range
Versatile design suitable for a variety of power electronic applications
Robust packaging and high-quality manufacturing for long-term reliability
Cost-effective solution for power conversion and control needs
FQPF18N65Fairchild (onsemi)