Manufacturer Part Number
FQPF20N06
Manufacturer
onsemi
Introduction
The FQPF20N06 is a discrete N-channel MOSFET transistor designed for power management and switching applications.
Product Features and Performance
60V drain-to-source voltage rating
15A continuous drain current rating at 25°C
60mΩ maximum on-resistance at 7.5A, 10V
590pF maximum input capacitance at 25V
30W maximum power dissipation at 25°C
Product Advantages
Low on-resistance for improved efficiency
High current handling capability
Wide operating temperature range (-55°C to 175°C)
Suitable for various power electronics applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 60mΩ @ 7.5A, 10V
Continuous Drain Current (Id): 15A @ 25°C
Input Capacitance (Ciss): 590pF @ 25V
Power Dissipation (Ptot): 30W @ 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Through-hole mounting (TO-220-3 package)
Compatible with various power electronics circuits and systems
Application Areas
Power supplies
Motor drives
Switching circuits
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High current handling and low on-resistance for improved efficiency
Wide operating temperature range for versatile applications
Reliable and RoHS-compliant construction
Suitable for various power electronics and switching applications
FQPF20N10KERSEMI