Manufacturer Part Number
FQPF22P10
Manufacturer
onsemi
Introduction
High-performance P-channel power MOSFET
Product Features and Performance
High drain-source breakdown voltage of 100V
Low on-resistance of 125mΩ @ 6.6A, 10V
Wide operating temperature range of -55°C to 175°C
Fast switching speed
Low gate charge of 50nC @ 10V
Product Advantages
Excellent power efficiency
Reliable performance in high-voltage applications
Suitability for a wide range of operating conditions
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±30V
Continuous Drain Current (Id): 13.2A @ 25°C
On-Resistance (Rds(on)): 125mΩ @ 6.6A, 10V
Input Capacitance (Ciss): 1500pF @ 25V
Power Dissipation (Tc): 45W
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operations
Compatibility
Through-hole mounting
Application Areas
Power supplies
Motor drives
Industrial automation
Automotive electronics
Product Lifecycle
Currently in production
Replacement or upgrade options available
Key Reasons to Choose This Product
Excellent power efficiency and reliability
Wide operating temperature range
Fast switching speed for high-frequency applications
Suitability for high-voltage, high-current operations
RoHS3 compliance for environmental responsibility