Manufacturer Part Number
FQPF27P06
Manufacturer
onsemi
Introduction
The FQPF27P06 is a P-channel MOSFET transistor from onsemi, designed for use in a variety of power electronics and switching applications.
Product Features and Performance
60V Drain-Source Voltage (Vdss)
±25V Gate-Source Voltage (Vgs)
70mOhm Max On-Resistance (RdsOn) at 8.5A, 10V
17A Continuous Drain Current (ID) at 25°C
1400pF Max Input Capacitance (Ciss) at 25V
47W Max Power Dissipation at 25°C
Operating Temperature Range: -55°C to 175°C
Product Advantages
Low on-resistance for efficient power switching
High current handling capability
Wide operating temperature range
Suitable for various power electronics applications
Key Technical Parameters
MOSFET Technology
P-Channel FET Type
4V Max Gate Threshold Voltage (Vgs(th)) at 250A
10V Drive Voltage (Max RdsOn, Min RdsOn)
43nC Max Gate Charge (Qg) at 10V
Quality and Safety Features
RoHS3 Compliant
TO-220F-3 Package
Compatibility
Suitable for Through-Hole Mounting
Application Areas
Power Supplies
Motor Drives
Switching Power Converters
Industrial Electronics
Automotive Electronics
Product Lifecycle
The FQPF27P06 is an active and available product from onsemi.
Key Reasons to Choose This Product
Excellent power switching performance with low on-resistance
Wide operating temperature range for harsh environments
High current handling capability for demanding applications
Reliable and RoHS-compliant design
Compatibility with through-hole mounting for versatile usage
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