Manufacturer Part Number
FQPF2N60
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
N-Channel MOSFET
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 800mA, 10V
Current Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Product Advantages
High voltage rating
Low on-resistance
Suitable for high power applications
Key Technical Parameters
MOSFET Technology
TO-220-3 Package
Operating Temperature: -55°C ~ 150°C (TJ)
Quality and Safety Features
Through Hole Mounting
Compatibility
Can be used in various power electronics and high voltage applications
Application Areas
Power Supplies
Motor Drives
Inverters
Converters
Product Lifecycle
Currently available
Replacements or upgrades may be available in the future
Several Key Reasons to Choose This Product
High voltage capability
Low on-resistance for efficient power handling
Suitable for a wide range of high power electronic applications
Reliable performance within the specified operating temperature range
FQPF2N70CFairchild (onsemi)