FQPF2N80 - onsemi

Manufacturer Part Number

FQPF2N80

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Single Transistor FET, MOSFET

Product Features and Performance

N-Channel MOSFET

Drain to Source Voltage (Vdss): 800 V

Operating Temperature: -55°C to 150°C (TJ)

Continuous Drain Current (Id) @ 25°C: 1.5A (Tc)

On-State Resistance (Rds(on)) @ 750mA, 10V: 6.3 Ohm

Input Capacitance (Ciss) @ 25V: 550 pF

Power Dissipation (Tc): 35W

Product Advantages

High Voltage Capability

Low On-State Resistance

Wide Operating Temperature Range

Key Technical Parameters

Vgs (Max): ±30V

Vgs(th) (Max) @ 250μA: 5V

Drive Voltage (Max Rds On, Min Rds On): 10V

Gate Charge (Qg) @ 10V: 15 nC

Quality and Safety Features

RoHS3 Compliant

Compatibility

Through Hole Mounting

Application Areas

Industrial Power Conversion

Motor Control

Lighting

Product Lifecycle

Current product, no discontinuation or replacement planned

Key Reasons to Choose This Product

High Voltage Capability

Low On-State Resistance

Wide Operating Temperature Range

Compact Through Hole Package