Manufacturer Part Number
FQPF2N60C
Manufacturer
Fairchild (onsemi)
Introduction
High-performance N-channel power MOSFET with low on-resistance and fast switching characteristics, suitable for a variety of power conversion and control applications.
Product Features and Performance
600V drain-source voltage rating
Low on-resistance of 4.7Ω @ 1A, 10V
High current capability of 2A continuous drain current at 25°C
Fast switching with 12nC gate charge at 10V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent efficiency and thermal management due to low on-resistance
Reliable performance across wide temperature range
Fast switching enables high-frequency operation
Compact TO-220 package for space-constrained designs
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 4.7Ω @ 1A, 10V
Continuous Drain Current (Id): 2A @ 25°C
Input Capacitance (Ciss): 235pF @ 25V
Power Dissipation (Ptot): 23W @ Tc
Quality and Safety Features
Robust MOSFET technology with high voltage and current capabilities
Designed and manufactured to high quality standards for reliability
Overcurrent and overvoltage protection features
Compatibility
Can be used in a wide range of power conversion and control applications
Suitable for use in industrial, consumer, and automotive electronics
Application Areas
Switch-mode power supplies (SMPS)
Motor drives
Lighting ballasts
Inverters
Wireless power transfer
Product Lifecycle
Current product with no plans for discontinuation
Replacement parts and upgrades are readily available
Key Reasons to Choose This Product
Excellent efficiency and thermal performance due to low on-resistance
Fast switching capability enables high-frequency operation
Robust design and wide operating temperature range for reliable performance
Compact TO-220 package allows for space-efficient designs
Proven reliability and quality from a reputable manufacturer
FQPF2N30Fairchild SemiconductorMOSFET N-CH 300V 1.34A TO220F