Manufacturer Part Number
FQPF2N60C
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET transistor for power switching applications
Product Features and Performance
Ultra-low RDS(on) for high efficiency
Robust avalanche capability
Fast switching speed
Low gate charge for high-frequency operation
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent energy efficiency
High reliability and ruggedness
Suitable for high-frequency applications
Wide operating temperature range
Key Technical Parameters
Drain-to-Source Voltage (VDS): 600V
Maximum Gate-to-Source Voltage (VGS): ±30V
On-State Resistance (RDS(on)): 4.7Ω @ 1A, 10V
Continuous Drain Current (ID): 2A @ 25°C
Input Capacitance (Ciss): 235pF @ 25V
Power Dissipation (PD): 23W @ Tc
Quality and Safety Features
Compliant with RoHS3 requirements
Reliable TO-220F-3 package
Compatibility
Compatible with various power supply and control applications
Application Areas
Power supplies
Motor drives
Inverters
Switch-mode power supplies
Industrial and domestic appliances
Product Lifecycle
Currently in active production
Replacement or upgrade options available
Key Reasons to Choose This Product
Excellent energy efficiency and high reliability
Suitable for high-frequency and high-voltage applications
Wide operating temperature range for versatile use
RoHS3 compliance for environmental responsibility
Proven performance and reliability in various power electronics applications
