Manufacturer Part Number
FQPF19N10
Manufacturer
onsemi
Introduction
The FQPF19N10 is a high-performance N-channel MOSFET transistor suitable for a wide range of power electronics applications.
Product Features and Performance
100V Drain-to-Source Voltage (Vdss)
Low On-Resistance (Rds(on)) of 100mΩ @ 6.8A, 10V
Continuous Drain Current (Id) of 13.6A at 25°C
Wide Operating Temperature Range of -55°C to 175°C
Fast Switching Speed and Low Gate Charge (Qg) of 25nC @ 10V
High Power Dissipation Capability of 38W at Tc
Product Advantages
Excellent efficiency and performance for power conversion applications
Robust design for reliable operation in harsh environments
Optimized for low power loss and high-frequency switching
Key Technical Parameters
Vdss: 100V
Vgs(th) (Max): 4V @ 250A
Rds(on) (Max): 100mΩ @ 6.8A, 10V
Id (Continuous): 13.6A @ 25°C
Ciss (Max): 780pF @ 25V
Qg (Max): 25nC @ 10V
Quality and Safety Features
ROHS3 Compliant
TO-220F-3 Package for Reliable Thermal Performance
Compatibility
Compatible with a wide range of power electronics applications, including motor drives, power supplies, and inverters.
Application Areas
Power Conversion Circuits
Motor Drives
Inverters
Power Supplies
Industrial Electronics
Product Lifecycle
The FQPF19N10 is an active product and is not nearing discontinuation.
Replacement or upgrade options may be available from onsemi.
Key Reasons to Choose This Product
Excellent efficiency and low power loss for improved system performance
Robust design for reliable operation in harsh environments
Versatile compatibility for a wide range of power electronics applications
Optimized switching speed and gate charge for high-frequency operation
Compact and thermally efficient TO-220F-3 package