FQPF18N50V2 - onsemi

Manufacturer Part Number

FQPF18N50V2

Manufacturer

onsemi

Introduction

High-power N-channel MOSFET transistor

Product Features and Performance

High voltage rating of 500V

Low on-resistance of 265 mOhm

Continuous drain current of 18A at 25°C

Wide operating temperature range of -55°C to 150°C

Low input capacitance of 3290 pF

Maximum power dissipation of 69W

Product Advantages

Robust and reliable performance

Suitable for high-voltage and high-current applications

Efficient power conversion and control

Excellent thermal management

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 500V

Gate-to-Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 265 mOhm

Continuous Drain Current (Id): 18A

Input Capacitance (Ciss): 3290 pF

Power Dissipation (Ptot): 69W

Quality and Safety Features

Manufactured using high-quality MOSFET technology

Meets safety and reliability standards

Compatibility

Suitable for a wide range of high-power electronic applications

Application Areas

Switching power supplies

Motor drives

Industrial automation and control

Renewable energy systems

Automotive electronics

Product Lifecycle

This product is currently available and not nearing discontinuation

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Excellent voltage and current handling capabilities

High efficiency and low power losses

Robust and reliable performance in demanding applications

Suitable for high-voltage and high-current operations

Efficient thermal management for improved reliability

Compatibility with a wide range of electronic systems