Manufacturer Part Number
FQPF18N50V2
Manufacturer
onsemi
Introduction
High-power N-channel MOSFET transistor
Product Features and Performance
High voltage rating of 500V
Low on-resistance of 265 mOhm
Continuous drain current of 18A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 3290 pF
Maximum power dissipation of 69W
Product Advantages
Robust and reliable performance
Suitable for high-voltage and high-current applications
Efficient power conversion and control
Excellent thermal management
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 500V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 265 mOhm
Continuous Drain Current (Id): 18A
Input Capacitance (Ciss): 3290 pF
Power Dissipation (Ptot): 69W
Quality and Safety Features
Manufactured using high-quality MOSFET technology
Meets safety and reliability standards
Compatibility
Suitable for a wide range of high-power electronic applications
Application Areas
Switching power supplies
Motor drives
Industrial automation and control
Renewable energy systems
Automotive electronics
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent voltage and current handling capabilities
High efficiency and low power losses
Robust and reliable performance in demanding applications
Suitable for high-voltage and high-current operations
Efficient thermal management for improved reliability
Compatibility with a wide range of electronic systems
