Manufacturer Part Number
PMV65XP,215
Manufacturer
Nexperia
Introduction
This is a P-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) device.
Product Features and Performance
Low on-resistance (RDS(on)) of 74 milliohms
Continuous drain current (ID) of 2.8 A at 25°C
Input capacitance (Ciss) of 744 pF at 20 V
Power dissipation of 480 mW at 25°C
Operating temperature range of -55°C to 150°C
Product Advantages
High efficiency due to low on-resistance
Compact surface mount package
Suitable for high-frequency and high-power applications
Key Technical Parameters
Drain-to-source voltage (VDS) of 20 V
Gate-to-source voltage (VGS) of ±12 V
Gate threshold voltage (VGS(th)) of 900 mV at 250 μA
Gate charge (Qg) of 7.7 nC at 4.5 V
Quality and Safety Features
RoHS3 compliant
Packaged in a TO-236AB (SOT-23-3) surface mount package
Compatibility
This MOSFET is suitable for use in a wide range of electronic applications.
Application Areas
Power management circuits
Switching applications
Driver circuits
Amplifier circuits
Product Lifecycle
This product is currently in production and available for purchase. Nexperia regularly releases updated versions or replacements for their product lineup, so it's recommended to check for any newer or more suitable options.
Several Key Reasons to Choose This Product
Excellent efficiency and low power loss due to the low on-resistance
Compact and space-saving surface mount package
Wide operating temperature range for reliable performance in diverse environments
Suitable for high-frequency and high-power applications
RoHS3 compliance for use in environmentally conscious designs
PMV65XPFreescale / NXP Semiconductors