Manufacturer Part Number
PMV65XP,215
Manufacturer
NXP Semiconductors
Introduction
Discrete Semiconductor Product
Transistors - FETs, MOSFETs - Single
Product Features and Performance
Manufacturer's packaging: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Package: Bulk
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Rds On (Max) @ Id, Vgs: 74mOhm @ 2.8A, 4.5V
Technology: MOSFET (Metal Oxide)
Current Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 20 V
Power Dissipation (Max): 480mW (Ta)
FET Type: P-Channel
Vgs(th) (Max) @ Id: 900mV @ 250A
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 4.5 V
Mounting Type: Surface Mount
Product Advantages
Wide operating temperature range
Low on-resistance
High current capability
Suitable for a variety of applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Rds On (Max) @ Id, Vgs: 74mOhm @ 2.8A, 4.5V
Current Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Power Dissipation (Max): 480mW (Ta)
Quality and Safety Features
Meets industry standards for quality and safety
Compatibility
Suitable for a variety of applications
Application Areas
General-purpose electronics
Power management
Switching applications
Product Lifecycle
Currently available
Replacement or upgrade options may be available
Key Reasons to Choose This Product
Wide operating temperature range
Low on-resistance
High current capability
Suitable for a variety of applications
Meets industry standards for quality and safety
PMV62XNFreescale / NXP Semiconductors