Manufacturer Part Number
FCH110N65F-F155
Manufacturer
onsemi
Introduction
The FCH110N65F-F155 is a high-performance N-Channel MOSFET from onsemi's SuperFET II series. It is designed for use in a wide range of power electronics applications.
Product Features and Performance
650V Drain-Source Voltage
110mΩ On-Resistance
35A Continuous Drain Current
-55°C to 150°C Operating Temperature Range
Low Input Capacitance of 4895pF
357W Power Dissipation Capability
Product Advantages
Excellent switching and conduction performance
Enhanced thermal management
Robust design for reliability
Optimized for high-efficiency power conversion
Key Technical Parameters
Drain-Source Voltage (Vdss): 650V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 110mΩ
Continuous Drain Current (Id): 35A
Input Capacitance (Ciss): 4895pF
Power Dissipation (Tc): 357W
Quality and Safety Features
RoHS3 Compliant
Through-hole mounting
TO-247-3 package
Compatibility
The FCH110N65F-F155 is compatible with a wide range of power electronics applications, including:
Switch-mode power supplies
Motor drives
Inverters
DC-DC converters
Welding equipment
Induction heating systems
Application Areas
Industrial
Automotive
Renewable energy
Consumer electronics
Product Lifecycle
The FCH110N65F-F155 is an active product and is not nearing discontinuation. Replacement or upgrade options may be available from onsemi.
Key Reasons to Choose This Product
High efficiency and low switching losses
Robust and reliable design
Excellent thermal management
Wide operating temperature range
Compatibility with a variety of power electronics applications
Backed by onsemi's expertise and support
FCH10A20KYOCERA AVXDIODE SCHOT 200V 10A TO220 F