SI7820DN-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI7820DN-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

The SI7820DN-T1-E3 is a discrete N-channel power MOSFET transistor manufactured by Vishay/Siliconix.

Product Features and Performance

Trench MOSFET technology

200V Drain-Source Voltage (Vdss)

7A Continuous Drain Current (Id) at 25°C

240mΩ On-Resistance (Rdson) at 2.6A, 10V

Low Gate Charge (Qg) of 18nC at 10V

Wide Operating Temperature Range: -55°C to 150°C

Product Advantages

Excellent power efficiency and low switching losses

Compact and space-saving PowerPAK 1212-8 package

Suitable for high-frequency switching applications

Key Technical Parameters

Drain-Source Voltage (Vdss): 200V

Gate-Source Voltage (Vgs): ±20V

On-Resistance (Rdson): 240mΩ @ 2.6A, 10V

Drain Current (Id): 1.7A (Ta)

Power Dissipation (Max): 1.5W (Ta)

Gate Charge (Qg): 18nC @ 10V

Quality and Safety Features

RoHS3 compliant

Suitable for high-temperature operation up to 150°C

Compatibility

Compatible with standard surface mount assembly processes

Application Areas

Switching power supplies

DC-DC converters

Motor drives

Industrial and consumer electronics

Product Lifecycle

Currently in active production

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Excellent power efficiency and low switching losses

Compact and space-saving package

Wide operating temperature range

Suitable for high-frequency switching applications

RoHS3 compliance for environmental safety