Manufacturer Part Number
SI7810DN-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
N-channel enhancement-mode power MOSFET
Designed for high-frequency switching applications
Product Features and Performance
Trench technology for low on-resistance
Optimized for high-frequency switching
Low gate charge and gate-source threshold voltage
Low drain-source on-resistance
Product Advantages
Efficient power conversion
High power density
Reliable performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 100 V
Gate-Source Voltage (Vgs): ±20 V
Drain-Source On-Resistance (Rds(on)): 62 mΩ @ 5.4 A, 10 V
Continuous Drain Current (Id): 3.4 A @ 25°C
Power Dissipation (Pd): 1.5 W @ 25°C
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS 3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with high-frequency switching circuits
Suitable for various power conversion applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
DC/DC converters
Lighting ballasts
Product Lifecycle
Current product
Availability of replacements and upgrades
Key Reasons to Choose This Product
Efficient power conversion with low on-resistance
Reliable performance in high-frequency switching applications
Compact and space-saving design with PowerPAK 1212-8 package
Suitable for a wide range of power conversion applications
Proven Vishay/Siliconix quality and reliability
SI7806DNElectro-Films (EFI) / Vishay