Manufacturer Part Number
SI7818DN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 135mOhm @ 3.4A, 10V
Current Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Product Advantages
High voltage rating up to 150V
Low on-resistance
Low gate charge for efficient switching
Wide operating temperature range of -55°C to 150°C
Key Technical Parameters
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 Compliant
Manufacturer's packaging: PowerPAK 1212-8
Compatibility
Package / Case: PowerPAK 1212-8
Supplier Device Package: PowerPAK 1212-8
Series: TrenchFET
Package: Tape & Reel (TR)
Application Areas
Suitable for various power conversion and control applications
Product Lifecycle
Currently available
No information on discontinuation or replacements
Several Key Reasons to Choose This Product
High voltage rating up to 150V
Low on-resistance for efficient power switching
Low gate charge for fast and efficient switching
Wide operating temperature range of -55°C to 150°C
RoHS3 compliance for environmental safety
Compact and reliable PowerPAK 1212-8 package