SI7818DN-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI7818DN-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Single Transistor FET, MOSFET

Product Features and Performance

N-Channel MOSFET

150V Drain-Source Voltage

135mΩ On-Resistance @ 3.4A, 10V

2A Continuous Drain Current @ 25°C

5W Power Dissipation

-55°C to 150°C Operating Temperature Range

30nC Gate Charge @ 10V

Product Advantages

RoHS3 Compliant

PowerPAK 1212-8 Package

TrenchFET Technology

Key Technical Parameters

Vdss: 150V

Vgs (Max): ±20V

Rds On (Max): 135mΩ

Id (Continuous): 2.2A

Power Dissipation: 1.5W

Vgs(th) (Max): 4V @ 250A

Drive Voltage (Max Rds On, Min Rds On): 6V, 10V

Gate Charge (Qg) (Max): 30nC @ 10V

Quality and Safety Features

RoHS3 Compliant

Compatibility

Surface Mount

Application Areas

General Purpose Power Switching and Amplification

Product Lifecycle

Currently available

No information on discontinuation or replacements

Key Reasons to Choose This Product

High voltage rating of 150V

Low on-resistance of 135mΩ

High continuous drain current of 2.2A

Wide operating temperature range of -55°C to 150°C

Compact PowerPAK 1212-8 package

RoHS3 compliance for environmental safety