SI7820DN-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI7820DN-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Products

Transistors FETs, MOSFETs Single

Product Features and Performance

RoHS3 Compliant

PowerPAK 1212-8 package

Surface Mount

TrenchFET series

Tape & Reel (TR) packaging

Operating Temperature: -55°C to 150°C (TJ)

Drain to Source Voltage (Vdss): 200V

Vgs (Max): ±20V

Rds On (Max) @ Id, Vgs: 240mOhm @ 2.6A, 10V

MOSFET (Metal Oxide) technology

Current Continuous Drain (Id) @ 25°C: 1.7A (Ta)

Power Dissipation (Max): 1.5W (Ta)

N-Channel FET Type

Vgs(th) (Max) @ Id: 4V @ 250A

Drive Voltage (Max Rds On, Min Rds On): 6V, 10V

Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V

Product Advantages

RoHS3 compliance

High voltage and low on-resistance

Compact PowerPAK 1212-8 package

Wide operating temperature range

Suitable for various power electronics applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 200V

Vgs (Max): ±20V

Rds On (Max) @ Id, Vgs: 240mOhm @ 2.6A, 10V

Current Continuous Drain (Id) @ 25°C: 1.7A (Ta)

Power Dissipation (Max): 1.5W (Ta)

Vgs(th) (Max) @ Id: 4V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V

Quality and Safety Features

RoHS3 compliant

Wide operating temperature range

Robust TrenchFET technology

Compatibility

Suitable for various power electronics applications

Application Areas

Power electronics

Motor control

Switching power supplies

Industrial automation

Automotive electronics

Product Lifecycle

Currently available

No information on discontinuation or replacement

Key Reasons to Choose This Product

RoHS3 compliance for environmental regulations

High voltage and low on-resistance for efficient power conversion

Compact PowerPAK 1212-8 package for space-constrained designs

Wide operating temperature range for versatile applications

Robust TrenchFET technology for reliable performance