Manufacturer Part Number
SI7812DN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel TrenchFET power MOSFET
Product Features and Performance
Capable of 16A continuous drain current at 25°C case temperature
Low on-resistance of 37mOhm at 10V gate voltage
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power efficiency and thermal management
Suitable for high-current, high-power density applications
Robust design for reliable operation
Key Technical Parameters
Drain-to-source voltage up to 75V
Gate-to-source voltage up to ±20V
Input capacitance of 840pF at 35V
Quality and Safety Features
RoHS3 compliant
Manufactured in a quality-controlled environment
Compatibility
Compatible with a variety of high-power electronic circuits and systems
Application Areas
Suitable for use in power supplies, motor drives, industrial automation, and other high-power applications
Product Lifecycle
This product is an active and widely available TrenchFET MOSFET
Replacement or upgraded models may become available in the future as technology advances
Key Reasons to Choose This Product
High current handling capability and low on-resistance for efficient power conversion
Robust design and wide operating temperature range for reliable operation in demanding environments
Optimized for high-power, high-density applications where space and thermal management are critical
SI7806BDPElectro-Films (EFI) / Vishay