SI7108DN-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI7108DN-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

N-Channel MOSFET Transistor

Product Features and Performance

MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) technology

N-channel configuration

PowerPAK 1212-8 package

Supports continuous drain current up to 14A at 25°C

Low on-resistance (Rds(on)) of 4.9mΩ at 22A, 10V

Wide operating temperature range of -55°C to 150°C

Fast switching speed

Low gate charge (Qg) of 30nC at 4.5V

Product Advantages

Excellent power efficiency due to low on-resistance

Compact and thermally efficient PowerPAK package

Wide temperature range for use in diverse applications

Fast switching capabilities for high-frequency switching circuits

Key Technical Parameters

Drain-Source Voltage (Vdss): 20V

Gate-Source Voltage (Vgs): ±16V

Threshold Voltage (Vgs(th)): 2V at 250μA

On-Resistance (Rds(on)): 4.9mΩ at 22A, 10V

Continuous Drain Current (Id): 14A at 25°C

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified for automotive applications

Compatibility

This MOSFET is compatible with a wide range of electronic circuits and devices that require a high-performance, low on-resistance switching device.

Application Areas

Power management circuits

Motor control

Industrial automation

Automotive electronics

Switching power supplies

Product Lifecycle

The SI7108DN-T1-E3 is an actively supported product from Vishay/Siliconix. There are no plans for discontinuation, and replacement or upgrade options are available if needed.

Key Reasons to Choose This Product

Excellent power efficiency due to low on-resistance

Compact and thermally efficient PowerPAK package

Wide operating temperature range for use in diverse applications

Fast switching capabilities for high-frequency switching circuits

RoHS3 compliance and AEC-Q101 qualification for reliability and safety