SI7111EDN-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI7111EDN-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

P-channel MOSFET with low on-resistance and high current capability in a PowerPAK 1212-8 surface-mount package.

Product Features and Performance

TrenchFET Gen III technology

Low on-resistance of 8.55 mΩ at 15 A, 4.5 V

Continuous drain current of 60 A at 25°C

Input capacitance of 5860 pF at 15 V

Maximum power dissipation of 52 W at 25°C

Product Advantages

Excellent power efficiency

High current handling capability

Small package size for high-density applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 30 V

Gate-Source Voltage (Vgs) (Max): ±12 V

Threshold Voltage (Vgs(th)) (Max): 1.6 V at 250 A

Drive Voltage (Max Rds On, Min Rds On): 2.5 V, 4.5 V

Gate Charge (Qg) (Max): 46 nC at 2.5 V

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering

Compatibility

Compatible with various electronic circuit designs that require high-performance P-channel MOSFETs

Application Areas

Power management circuits

Motor control

Industrial and consumer electronics

Product Lifecycle

The SI7111EDN-T1-GE3 is an actively supported product, and Vishay continues to manufacture and supply it.

Replacement or upgrade options may be available from Vishay or other MOSFET manufacturers.

Several Key Reasons to Choose This Product

Excellent power efficiency and high current handling capability

Small package size for high-density applications

Robust design and compliance with industry standards

Ongoing product support and availability of replacement options